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Enrico Prati (1974) is permanent research scientist of CNR. He received the Italian Laurea Degree in Theoretical Physics in 1998 at the Università di Pisa and, in 2002, the PhD in Physics with thesis on microwave frequency transport in semiconductors (Università di Pisa and Istituto per i Processi Chimico Fisici of the CNR, Italy, part of the work realized at Caswell Technology - Marconi - Towcester, UK). He joined Laboratorio MDM of INFM/CNR in 2003, up to 2013. From 2013, he is with Istituto di Fotonica e Nanotecnologie of CNR (IFN-CNR). His current research fields are both theoretical and experimental aspects of quantum information, low dimensional electron systems, quantum transport, applications of atomic scale nanoelectronics to photonics and artificial intelligence, microwave and THz effects in nanostructures.  

In February 2004 he has been awarded with the Young Scientist Award 2004 by the URSI Commettee for his work on negative refractive index propagation and metamaterials. He served as National Secretary of the Associazione Italiana per la Ricerca from 2007 to 2014. In March 2009 he received the 4th Jury Prize for its Essay on the Nature of Time from the "Foundational Questions in Physics and Cosmology Institute" FQXi granted by the John Templeton Foundation. He developed the theory and later he carried the experimental demonstration of valley blockade, finite quantum grand canonical ensemble and generalized temperature of a few particles system. He has been responsible of a bilateral project of CNR with NSC (Taiwan) and a bilateral project Italy-Japan with Waseda University granted by the Italian Ministry of Foreign Affairs (MAE). From 2014 is JSPS Visiting Scholar of Waseda University (Tokyo). He has been co-organizer of the workshop DICE2010 (keynote L. Montagnier - Nobel Prize) , DICE2012  (Y. Aharonov - Wolf Prize), DICE2014 (keynotes G. t'Hooft - Nobel Prize, A. Connes - Fields Medal) and DICE2016 (keynote N. Chomsky - Helmholtz Medal) He was member of the ITRS workgroup on deterministic doping chapter in Berkeley, January 2013. He was Plenary Keynote Speaker at IEDM 2014 in San Francisco (main conference on semiconductor electron device in the world, 2000 attendees from academy and industry of semiconductors) and TEDx speaker in Rome in 2016. 

QUANTUM TRANSPORT IN NANOELECTRONIC DEVICES

From cryogenic to room temperature, single electron and single atom doped silicon transistors show the signatures  of quantum mechanics and put the ground for control of quantum information. 

[Mostly experimental with strong theoretical background]

QUANTUM INFORMATION

Solid state qubits are the basic element to create circuits and architectures to implement quantum algorithm. The second quantization Hamiltonian mechanics is the natural language to develop and drive their properties.


[Theoretical] 

STOCHASTIC EFFECTS IN ARTIFICIAL INTELLIGENCE

Real neurons create microcircuits whose response is optimized despite and thanks to huge electronic noise. Noise, chaos and stochastic effects are exploited to carry neural information processing.

[Simulations and experiments]

METAMATERIALS AND ATOM BASED PHOTONICS

An electromagnetic research field where material science is employed to engineer the response of media by exploiting the laws of physics, towards the atomic scale for photonic applications.

[Mainly experimental]

FOUNDATIONS OF PHYSICS OF TIME

The methods of mathematics, physics ad logics are employed to establish speakable and unspeakable in the physics of time, leading to support timeless physics at a fundamental level.

[Theoretical]

    REPRESENTATIVE PUBLICATIONS OF THE LAST 5 YEARS

[1] E. Prati, M. Hori, F. Guagliardo, G. Ferrari, and T. Shinada, Anderson–Mott transition in arrays of a few dopant atoms in a silicon transistor, Nature Nanotechnology 7, 443–447 (2012) [IF 35.267]

[2] D. Rotta. F. Sebastiano, E. Charbon, and E. Prati. Quantum information density scaling and qubit operation time constraints of CMOS silicon-based quantum computer architectures, Nature Quantum Information 3, 26 (2017) [IF na] Free PDF

[3] Y. Shimizu, ... E. Prati, Behavior of phosphorous and contaminants from molecular doping combined with a conventional spike annealing method, Nanoscale, 6(2), 706-710 (2014) [IF 7.760]

[4] E. Ferraro, ..., and E. Prati, Effective Hamiltonian for the hybrid double quantum dot qubit, Quantum Information Processing, 13, 1 (2014) [IF 2.96]

[5] E. Ferraro, ..., and E. Prati, Effective Hamiltonian for two interacting double-dot exchange-only qubits and their controlled-NOT operations, Quantum Information Processing, 14(1), 47-65 (2015) [IF 2.96]

[6] M. De Michielis, ..., and E. Prati, Universal set of quantum gates for double-dot exchange-only spin qubits with intradot coupling, Journal of Physics A: Mathematical and Theoretical, 48 065304 (2015) [IF 1.687]

[7] E. Ferraro, ..., and E. Prati, Coherent tunneling by adiabatic passage of an exchange-only spin qubit in a double quantum dot chain, Physical Review B, 91(7), 075435 (2015) [IF 3.691]

[8] A. Crippa, ..., and E. Prati, Valley blockade and multielectron spin-valley Kondo effect in silicon, Physical Review B, 92, 035424 (2015) [IF 3.691]

[9] M. Turchetti, H. Homulle, F. Sebastiano, G. Ferrari, E. Charbon, and E. Prati, Tunable single hole regime of a silicon field effect transistor in standard CMOS technology, Applied Physics Express 9, 014001 (2016) [IF 3.013]

[10] E. Prati, K. Kumagai, M. Hori, and T. Shinada, Band transport across a chain of dopant sites in silicon over micron distances and high temperatures, Nature Scientific Reports, 6,  19704  (2016) [IF 5.592] [Download PDF]

[11] E. Prati, “Atomic scale nanoelectronics for quantum neuromorphic devices", International Journal of Nanotechnology, 13, 7, 509-523 (2016) (2016) [Download PDF]

[12]  D. Rotta, ..., and E. Prati, Maximum density of quantum information in a scalable CMOS implementation of the hybrid qubit architecture, Quantum Information Processing, 15(6), 2253-2274 (2016) [IF 2.96]

    INVITED TALKS 2008-2016

[A] E. Prati et al., Microwave Effects in Silicon Nanostructures, ANM2008, Aveiro, May. 2008 (INVITED)

[B] E. Prati et al.,Control of the Energy Levels of a Single Atom in a Back Gated Silicon Quantum Dot, Nano2010, Rome, Sept. 2010 (INVITED)

[C] E. Prati, Competition of Spin and Valley Degrees of Freedom in Silicon Quantum Dots for Quantum Information Processing, ANM2010, Agadir, Sept. 2010 (INVITED)

[D] E. Prati, Exploring the foundations of physics in solid state systems at ultra-low energy, DICE2010 - Space Time Matter: Quantum Mechanics and Beyond, Castiglioncello, Italy, Sept. 2010 (INVITED)

[E] E. Prati, 21st-century directions in de Broglie-Bohm theory and beyond, Vallico, Italy, Sept. 2010 (INVITED)

[F] E. Prati, Exploring the foundations of physics in solid state systems at ultra-low energy, DICE2010 - Space Time Matter: Quantum Mechanics and Beyond, Castiglioncello, Italy, Sept. 2010 (COORGANIZER)

[G] E. Prati, Experiments with individual electrons, COST Action: QM Without Observers, Sesto, Italy, Aug. 2011 (INVITED)

[H] E. Prati et al., Atom Arrays in Semiconductors: From Quantum Computers to Quantum Encryption, PQCrypto 2011, Taipei, Taiwan, Nov. 2011 (RECENT RESULTS SESSION)

[I] T. Shinada et al., Quantum transport in deterministically implanted single-donors in Si FETs, IEDM 2011, Washington, USA, Dec. 2012 (SELECTED ORAL <30%) THIS TALK WAS GIVEN BY T. SHINADA

[L] E. Prati, Phase transitions in few electron systems, CORTONA 2012, Convegno Informale di Fisica Teorica, Cortona, Italy, May. 2012 (INVITED)

[M] E. Prati, Silicon nanoelectronic devices based on few donors, Nano 2012, Rhodes, Greece, Aug. 2012 (INVITED)

[N] E. Prati, Phase transitions in few atom systems, DICE 2012, Castiglioncello, Italy, Sept. 2012 (COORGANIZER)

[O] E. Prati et al., Single atom arrays for coherent transport in silicon devices, Silicon Quantum Electronics Workshop, Grenoble, France, Feb. 2013 (SELECTED ORAL < 30%)

[P] E. Prati, Formation of Hubbard bands in arrays of a few dopant atoms in a silicon transistor, Edison 18, Matsue, Japan, Jul. 2014 (INVITED)

[Q] E. Prati, Atomic scale nanoelectronics for quantum neuromorphic devices, INEC 2014, Hokkaido, Japan, Jul 2014 (INVITED)

[R] E. Prati, Programming the superbrain: from atoms to non-Von Neumann architecture, Codemotion 2015, Rome, Italy, Mar. 2015 (SELECTED ORAL)

[R] E. Prati, Single ion implantation of Ge donor impurity in silicon transistors, Silicon Nanoelectronic Workshop, Kyoto, Jun 2015 (INVITED)

[S] E. Prati, Quantum transport in silicon quantum devices: from valley states to the quantum Moore's law, QUAINT 2015, Swansea, UK Jul 2015 (INVITED)

[T] E. Prati, The quantum Moore's law: an upper bound to the amount of workable quantum information in silicon platform, SiQiP 2015 IoP Conference, Cambridge, Sept. 2015 (SELECTED ORAL)

[U] E. Prati, Quantum information at the time-reversal symmetry edge of quantum chaos, Time Machine Conference 2015, Torino, Italy, Oct. 2015 (INVITED)

[V] E. Prati, The quantum Moore's law: from atoms to scalability of silicon quantum information processing, PNiP 2015, Cambridge, Sept. 2015 (INVITED)

[W] E. Prati, Okinawa, CTAP in exchange-only spin qubits and scalability perspectives by CMOS quantum electronics, Mini Symposium "Spatial Adiabatic Passage", May 2016 (INVITED)

    FORMER CONFERENCES 2003-2006

[a] E. Prati, Official Launch of Metamaterials.net Project (www.metamaterials.net), Meeting Materiali Speciali e Metamateriali per l’Elettromagnetismo e le TLC, Firenze, Italy, Apr. 2003

[b] E. Prati, K-U Band Crossover in Split Ring Resonator Negative Permeability Metamaterials, International Student Seminar on Microwave Applications of Novel Physical Phenomena, Finland, May 2003

[c] E.Prati, Crossover Behaviour of Negative Permeability Metamaterials at 20-50 GHz, OHD2003 Proceeding, Calais, France, Sept. 2003

[d] E.Prati, S.Faralli, M.Martinelli, G.E.Annino, Microwave Hall Effect in n-doped ZnSe, European Microwave Week 2003, Munich, Oct. 2003

[e] E. Prati, J Ravazzola, Merging and Crossing Modes in Double Negative Metamaterials, URSI 2004, Pisa, May 2004

[f] E. Prati, M. Fanciulli, G. Ferrari, M. Sampietro, P. Fantini, Noise Modulation in MOSFETs Under Microwave Irradiation, UPON 2005, Gallipoli, Italy, Jun. 2005

[g] M. Fanciulli, E. Prati, G. Ferrari, M. Sampietro, Random Telegraph Signal in Si n-MOSFETs: a Way Towards Single Spin Resonance Detection, UPON 2005, Gallipoli, Italy, Jun. 2005 Posters at International Conferences

[h] E.Prati, S.Faralli, Microwave Hall Mobility in GaAs and ZnSe, Poster session, INFMeeting 2001, Rome, Italy (2001)

[i] E.Prati, S.Faralli, M.Martinelli, G.E.Annino, Microwave Hall Mobility in ZnSe and 2DEGs, Poster session, INFMeeting 2002, Bari, Italy (2002)

[l] E.Prati, S.Faralli, M.Martinelli, G.E.Annino, Microwave Hall Mobility in ZnSe and 2DEGs, Poster session, MIUR Meeting, Lecce, Italy (2002)

[m] E.Prati Microwave Propagation in Magnetic Semiconductors, Poster session, INFMeeting 2003, Genova, Italy (2003)

[n] E.Prati K-U Band Crossover in Negative Permeability Metamaterials, Poster session, INFMeeting 2003, Genova, Italy (2003)

[o] E.Prati, Gyroelectromagnetic Modes In a Ferromagnetic Semiconductor, Poster session, IV Convegno Nazionale sulla Scienza e Tecnologia dei Materiali, Ischia, Italy (2003)

[p] E. Prati, M. Fanciulli, F. Capotondi, G. Biasiol, L. Sorba, A. Kovalev, J. D. Caldwell, and C.R. Bowers, Magnetoresistively Detected Electron Spin Resonance in Low Density Two Dimensional Electron Gas in GaAs/AlGaAs Single Quantum Wells, Quantum Device Technology Workshop, Potsdam, NY, USA (2004)

[q] E. Prati, M. Fanciulli, G. Ferrari, M. Sampietro, P. Fantini, Microwave Induced Effects on the Random Telegraph Signal in a MOSFET, ICNF 2005, Salamanca, Spain (2005)

[r] E. Prati, M. Fanciulli, E. Dalle Mese, “Metamateriali con Passo Reticolare Confrontabile con la Lunghezza d’Onda”, II Simposio per le Tecnologie Avanzate “Applicazione delle Nanotecnologie per la Difesa nei settori Strutturale, Elettronico, Biotecnologico”, Proceedings, pp. 105-110, (2005)

[s] E. Prati, G. Ferrari, M. Sampietro, M. Fanciulli, “High Magnetic Field Dependence of Capture/Emission Fluctuations of a Single Defect in Silicon MOSFETs”, AIP Conf. Proc. 780, 221 (2005)

[t] E. Prati, G. Ferrari, L. Fumagalli, M. Sampietro, M. Fanciulli, “Microwave Power Detector Based on a Single MOSFET in Standard Technology”, Microwave Conference, 2005 European, 4-6 Oct. 2005, Vol. 2, 4 pp. ISBN: 2-9600551-2-8

[u] E. Prati, G. Ferrari, L. Fumagalli, M. Sampietro, M. Fanciulli “CMOS Compatible Microwave Power Detector Based on a Single MOSFET”, III Simposio per le Tecnologie Avanzate “Applicazione delle Nanotecnologie per la Difesa nei settori Strutturale, Elettronico, Biotecnologico”, Proceedings, (2006)


        FULL LIST OF PUBLICATIONS ON PEER REVIEWED INTERNATIONAL JOURNALS


THEORY

[1] E. Prati, Finite Quantum Grand Canonical Ensemble and Temperature from Single Electron Statistics in a Mesoscopic Device , Journal of Statistical Mechanics P01003 (2010)[IF 2.758] 

[2] E. Prati, Valley Blockade Quantum Switching in Silicon Nanostructures, Journal of Nanoscience and Nanotechnology, 11, 10, 8522-8526 (2011) [IF 1.987]


SINGLE ATOM TRANSISTORS

[2] E. Prati, K. Kumagai, M. Hori, and T. Shinada, Band transport across a chain of dopant sites in silicon over micron distances and high temperatures, Scientific Reports, in press (2016) [IF 5.109]

[3] E. Prati, M. Hori, F. Guagliardo, G. Ferrari, and T. Shinada, Anderson–Mott transition in arrays of a few dopant atoms in a silicon transistor, Nature Nanotechnology 7, 443–447 (2012) [IF 30.307]

[4] A. Crippa, .., and E. Prati, Valley blockade and multielectron spin-valley Kondo effect in silicon, Physical Review B, 92, 035424 (2015) arXiv

[4] G. Mazzeo, E. Prati, M. Belli, G. Leti, S. Cocco, M. Fanciulli, F. Guagliardo, and G. Ferrari, Charge dynamics of a single donor coupled to a few-electron quantum dot in silicon, Applied Physics Letters 100, 213107 (2012) [IF 3.844]

[5] E. Prati, M. Belli, S. Cocco, G. Petretto and M. Fanciulli, Adiabatic Charge Control in a Single Donor Atom Transistor, Applied Physics Letters, 98, 5, 053109 (2011) [IF 3.844]

[6] G. Leti, E. Prati, M. Belli, G. Petretto, M. Fanciulli, R. Wacquez, M. Vinet, and M. Sanquer, Switching quantum transport in a three donors silicon Fin-Field Effect Transistor, Applied Physics Letters, 99, 242102 (2011) [IF 3.844]

[7] E. Prati, R. Latempa, M. Fanciulli, Microwave Assisted Transport in a Single Donor Silicon Quantum Dot, Physical Review B 80, 14, 165331 (2009) [IF 3.691] arXiv


CMOS ELECTRON AND HOLE QUANTUM DOTS

[8] M. Turchetti, H. Homulle, F. Sebastiano, G. Ferrari, E. Charbon, and E. Prati, Tunable single hole regime of a silicon field effect transistor in standard CMOS technology, Applied Physics Express 9, 014001 (2016) [IF 3.013]

[9] E. Prati, M. De Michielis, M. Belli, S. Cocco, M. Fanciulli, D. Kotekar-Patil, M. Ruoff, D. P Kern, D. A. Wharam, J. Verduijn, G. C. Tettamanzi, S. Rogge, B. Roche, R. Wacquez, X. Jehl, M. Vinet and M. Sanquer, Few electron limit of n-type metal oxide semiconductor single electron transistors, Nanotechnology, 23, 215204 (2012) [IF 3.979]

[10] M. Pierre, R. Wacquez, B. Roche, X. Jehl, M. Sanquer, M. Vinet, E. Prati, M. Belli, M. Fanciulli, Compact silicon double and triple dots realized with only two gates, Applied Physics Letters, 95, 242107 (2009)[IF 3.844]


SINGLE ELECTRON IN A DEFECT: RANDOM TELEGRAPH SIGNAL

[11] E. Prati, M. Belli, M. Fanciulli and G. Ferrari, Measuring the Temperature of a Mesoscopic Electron System by means of Single Electron Statistics, Applied Physics Letters 96, 113109 (2010) arXiv:1002.0037 [IF 3.844]

[12] E. Prati, M. Fanciulli, Manipulation of localized charge states in n-MOSFETs with microwave irradiation, Physics Letters A 372, 3102-3104 (2008) [IF 2.174]

[13] E. Prati, M. Fanciulli, G. Ferrari, A. Calderoni, M. Sampietro, Effect of microwave irradiation on the emission and capture dynamics in silicon metal oxide semiconductor field effect transistors, Journal of Applied Physics 103, 104502, (2008) [IF 2.201]

[14] E. Prati, M. Fanciulli, G. Ferrari, M. Sampietro, Giant random telegraph signal generated by single charge trapping in submicron n-metal-oxide-semiconductor field-effect transistors, Journal of Applied Physics 103, 1 (2008) [IF 2.201]

[15] E. Prati, M. Fanciulli, A. Calderoni, G. Ferrari, M. Sampietro, Microwave irradiation effects on random telegraph signal in a MOSFET, Physics Letters A 370, 491-493 (2007) [IF 2.174]

[16] E. Prati, M. Fanciulli, G. Ferrari, M. Sampietro, Effect of the Triplet State on the Random Telegraph Signal in Si n-MOSFETs, Physical Review B 74, 033309 (2006) [IF 3.691]


TWO DIMENSIONAL SYSTEMS

[17] Y. Shimizu, H. Takamizawa, K. Inoue, F. Yano, Y. Nagai, L. Lamagna, M. Perego, G. Mazzeo, E. Prati, Behavior of phosphorous and contaminants from molecular doping combined with a conventional spike annealing method, Nanoscale, 6(2), 706-710 (2014) [IF 6.201]

[18] E. Prati, M. Fanciulli, F. Capotondi, G. Biasiol, L. Sorba, A. Kovalev, J. D. Caldwell, and C.R. Bowers, Magnetoresistively Detected Electron Spin Resonance in Low Density Two Dimensional Electron Gas in GaAs/AlGaAs Single Quantum Wells, IEEE Transactions on Nanotechnology 4, 100 (2005) [IF 2.154]

[19] M. Fanciulli, O. Costa, S. Baldovino, S. Cocco, G. Seguini, E. Prati, and G. Scarel, Defects at the high-k/semiconductor interfaces investigated by spin dependent spectroscopies, NATO Series book on "Defects in High-K Gate Dielectric tacks", Vol. 220 p. 263 (2005).


MICROWAVE EFFECTS ON SEMICONDUCTOR DEVICS

[20] E. Prati, S. Faralli, M. Martinelli, G. Annino, G. Biasiol, L. Sorba, Improved Microwave Hall Effect Measurements Method, Review Scientific Instruments, 74, 1, 154-159 (2003) [IF 1.738]

[21] G. Ferrari, L. Fumagalli, M. Sampietro, E. Prati and M. Fanciulli, CMOS fully compatible microwave detector based on MOSFET operating in resistive regime, IEEE Microwave and Wireless Components Letters, 15, 7, 445 (2005) [IF 2.302]

[22] G. Ferrari, L. Fumagalli, M. Sampietro, E. Prati and M. Fanciulli, DC current modulation in field effect transistors operating under microwave irradiation for quantum read out, Journal Applied Physics, 98, 044505 (2005) [IF 2.201]

 [23] E. Prati, R. Latempa, M. Fanciulli, Photon assited tunneling in quantum dots, in: “Electron spin resonance in low dimensional structures and related phenomena”, Topics in Applied Physics, 115/2009, 241-258, Springer (2009) [IF 1.510]

[24] E. Prati, R. Latempa, M. Fanciulli , Microwave Effects in Silicon Low Dimensional Nanostructures, Journal of Nanoscience and Nanotechnology, 10, 4, 2650–2655 (2010) [IF 1.987]


QUANTUM INFORMATION

[25] M. De Michielis, E. Prati, M. Fanciulli, G. Fiori, G. Iannaccone , Geometrical Effects on Valley-Orbital Filling Patterns in Silicon Quantum Dots for Robust Qubit Implementation, Applied Physics Express 5, 124001 1-3 (2012) [IF 3.013]

[26] E. Ferraro, M. Michielis, G. Mazzeo, M. Fanciulli, and E. Prati, Effective Hamiltonian for the hybrid double quantum dot qubit, Quantum Information Processing, 13, 1 (2014) [IF 2.96]

[27] E. Ferraro, M. De Michielis, M. Fanciulli, and E. Prati, Effective Hamiltonian for two interacting double-dot exchange-only qubits and their controlled-NOT operations, Quantum Information Processing, 14(1), 47-65 (2015) [IF 2.96]

[28] M. De Michielis, E. Ferraro, M. Fanciulli, and E. Prati, Universal set of quantum gates for double-dot exchange-only spin qubits with intradot coupling, Journal of Physics A: Mathematical and Theoretical, 48 065304 (2015) [IF 1.687]

[29] E. Ferraro, M. De Michielis, M. Fanciulli, and E. Prati, Coherent tunneling by adiabatic passage of an exchange-only spin qubit in a double quantum dot chain, Physical Review B, 91(7), 075435 (2015)

[30] D. Rotta, ..., and E. Prati, Maximum density of quantum information in a scalable CMOS implementation of the hybrid qubit architecture, Quantum Information Processing, 15(6), 2253-2274 (2016) [IF 2.96]


CRYOGENIC ELECTRONICS

[31] M. L. V. Tagliaferri, A. Crippa, S. Cocco, M. De Michielis, M. Fanciulli, G. Ferrari, and E. Prati, Modular Printed Circuit Boards for Broadband Characterization of Nanoelectronic Quantum Devices, IEEE Transactions on Instrumentation and Measurement, 65, 8, 1827-1835 (2016) [IF 2.450]

[32] H. Homulle,S. Visser, B. Patra, G. Ferrari, E. Prati, F. Sebastiano, E. Charbon, A Reconfigurable Cryogenic Platform for the Classical Control of Scalable Quantum Computers, Review of Scientific Instruments 88, 045103 (2017) arXiV PDF


ARTIFICIAL INTELLIGENCE (Recent topic)

[33] E. Prati, “Atomic scale nanoelectronics for quantum neuromorphic devices, International Journal of Nanotechnology, 13, 7, 509-523 (2016) REVIEW ARTICLE

[34] E. Prati, E.  Giussani, G. Ferrari and T. Asai, “Noise-assisted transmission of spikes in Maeda–Makino artificial neuron arrays, International Journal of Parallel, Emergent and Distributed Systems, DOI: 10.1080/17445760.2016.1189914 (2016)


METAMATERIALS AND PHOTONICS

[35] E. Prati, Propagation in gyroelectromagnetic guiding systems, J. Electr. Wav. Appl., 17, 8, 1177-1196 (2003) [IF 3.134]

[36] E. Prati, Crossover between the cell size and the wavelength of the incident radiation in metamaterials, Microw. Opt. Technol. Lett. 40, 4, 272 (2004) [IF 0.743]

[37] E. Prati, G. Annino, M. Martinelli, Complex Variational Axial Matching Method for Single-mode and Overmoded Dielectrid Resonators, Electromagnetism, 24, 8, 565-582 (2004) [IF 0.792]

[38] E. Prati, Microwave propagation in ferromagnetic semiconductors, J. Magnetism and Magnetic Materials, 272-276, 3, 1999-2001 (2004) [IF 1.283]

[39] E. Prati, Microwave Propagation in Round Guiding Structures Based on Double Negative Metamaterials, Int. Journ. Infr. And Mill. Waves, 27, 1227-1239 (2006) [IF 0.692]

[40] F. Costa , C. Amabile, A. Monorchio, E. Prati, Waveguide Dielectric Permittivity Measurement Technique Based on Resonant FSS Filters, IEEE Microwave and Wireless Components Letters, 21,5, 273 - 275 (2011) [IF 2.302]

[41] C. Amabile, E. Prati, F. Costa, A. Monorchio, Effect of the metal sheet thickness on the frequency blueshift in single layer composite materials at Ka microwave frequency, Progress in Electromagnetic Research Letters 22, 47-58 (2011) [IF NA]

[42] T.-T. Yeh, S. Genovesi, A. Monorchio, E. Prati, F. Costa, T.-Yu H., and T.-J. Yen, Ultra-broad and sharp-transition bandpass terahertz filters by hybridizing multiple resonances mode in monolithic metamaterials, Optics Express, 20, 7, 7580-7589 (2012) [IF 3.710]


PUBLICATIONS ON PHYSICS OF TIME

[43] E. Prati, Generalized clocks in timeless canonical formalism, J. Phys.: Conf. Ser. 306, 012013 (2011) Download PDF

[44] E. Prati, Speakable and unspeakablein physics of time, EPJ Web of Conferences 58, 01019 (2013) Download PDF